[14p-P05-1~12] 15.4 III-V-group nitride crystals

[14p-P05-4] Fabrication and Evaluation of AlGaN LED with p-AlGaN/n-ZnO Tunnel Junction Layer

〇(M2)Sonomi Kojima¹, Shun Ukita¹, Takeyoshi Tajiri¹, Kazuo Uchida¹ (1.UEC)

Keywords:

tunnel junction,zinc oxide(ZnO),nitride semiconductor

As a method to improve the electrical characteristics of the p-type contact layer in AlGaN LEDs, we have investigated hole injection enhancement by forming a tunnel junction with a thin n-type layer deposited on top of the p-type layer. In this study, we focus on ZnO, which has a similar crystal structure to GaN and can be doped at high concentrations. We fabricated an AlGaN LED with a p-AlGaN/n-ZnO tunnel junction in the p-type contact layer and evaluated its electrical characteristics.characteristics were evaluated.