[14p-P05-1~12] 15.4 III-V-group nitride crystals

[14p-P05-6] Study of Measuring Non-contact and Non-destructive Electrical Properties for AlGaN/GaN-HEMT using THz-TDSE

〇Takashi Fujii^1,2, Taishin Yamada¹, Toshiyuki Iwamoto², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.PNP)

Keywords:

THz,HEMT,GaN

We are developing a non-contact and non-destructive measurement method for the electrical properties of semiconductor epitaxial films using THz-TDSE. However, AlGaN/GaN-HEMTs have a two-dimensional electron gas at the interface between the AlGaN layer and the GaN layer, and the handling of this two-dimensional electron gas has been a drawback in the conventional Fresnel model. Therefore, a THz-Fresnel model has been proposed that adds the presence of interfacial currents to the boundary conditions. In this study, we examined the electrical characteristics of AlGaN/GaN-HEMT by adopting the THz-Fresnel Model, which is consistent with the layer structure model of AlGaN/GaN-HEMT.