[14p-P10-1~25] Symposium on Research and Human-Capital Development Activities aimed at Creating Next-Generation Semiconductors Industry

[14p-P10-21] Suppression of residual sulfur in PVD-MoS₂ films by cold wall annealing with H₂S

〇Naoki Matsunaga¹, Atsushi Hori¹, Hitoshi Wakabayashi¹ (1.Science Tokyo)

Keywords:

transition metal dichalcogenides,RF Magnetron Sputtering,Sulfur Vapor Annealing

In this study, MoS₂ film, one of transition metal dichalcogenides (TMDCs), which is expected to be applied as a next-generation semiconductor channel material, was deposited by RF magnetron sputtering method. The films were then cold wall annealed using hydrogen sulfide (H₂S) gas, which has a higher vapor pressure than that of sulfur powder, to improve crystallinity, and the chemical bonding states were evaluated.