Session Details
[14p-P10-1~25]Symposium on Research and Human-Capital Development Activities aimed at Creating Next-Generation Semiconductors Industry
Fri. Mar 14, 2025 4:00 PM - 6:00 PM JST
Fri. Mar 14, 2025 7:00 AM - 9:00 AM UTC
Fri. Mar 14, 2025 7:00 AM - 9:00 AM UTC
P10 (Gymnasium)
[14p-P10-1]4MGy Gamma-ray radiation effects on 4H-SiC active pixel sensors with Embedded UV Photodiode
〇(M1)Kazuma Tanigawa1, Tatsuya Meguro1, Akinori Takeyama2, Takeshi Ohshima2, Kazutoshi Kojima3, Yasunori Tanaka3, Shin-Ichiro Kuroki1 (1.RISE, Hiroshima Univ., 2.QST, 3.AIST)
[14p-P10-2]Fabrication and Sensing Characterization of Potentiometric CMOS Odor Sensor
〇Kaito Yotsugi1, Kaori Kako1, Naoko Inada1, Yong-Joon Choi1, Kazuhiro Takahashi1, Kazuaki Sawada1, Toshihiko Noda1 (1.Toyohashi Tech.)
[14p-P10-3]Design of deep-brain-implant multimodal sensor for measuring predicive of epilepsy patients
〇(M2)Yuto Nakamura1, Yasuyuki Kimura1, Hideo Doi1, Tomoko Horio1, Yong-Joon Choi1, Kazuhiro Takahashi1, Toshihiko Noda1, Kazuaki Sawada1 (1.Toyohashi Univ. of Tech.)
[14p-P10-4]Impact of the Statistical Properties of Random Telegraph Noises Generated by Stochastic Magnetic Tunnel Junctions on Probabilistic Computing Performance
〇Haruna Kaneko1,2, Shun Kanai1,2,3,4,5,6,7, Hideo Ohno5,8, Shunsuke Fukami1,2,5,6,8,9 (1.RIEC, Tohoku Univ., 2.Grad. School of Eng., Tohoku Univ., 3.JST PRESTO, 4.DEFS, Tohoku Univ., 5.CSIS, Tohoku Univ., 6.WPI-AIMR, Tohoku Univ., 7.QST, 8.CIES, Tohoku Univ., 9.InaRIS)
[14p-P10-5]Tunnel magnetoresistance in magnetic tunnel junctions with a metastable cubic GaN barrier
〇Hyeokjin Kwon1,2, Kenya Suzuki1,2, Kumar Deepak2, Masafumi Tsujikawa3, Tufan Roy4, Masafumi Shirai3,4, Shigemi Mizukami2,4 (1.Tohoku Univ., 2.WPI-AIMR, 3.RIEC, 4.CSIS)
[14p-P10-6]Modulation of current-induced effective magnetic field acting on domain walls by in-plane magnetic field in Pd/Co2MnGa perpendicular magnetization films
〇(DC)Takaya Koyama1, Yuki Nishioka1, Tetsuya Uemura1, Michihiko Yamanouchi1 (1.Hokkaido Univ.)
[14p-P10-7]Strain induced reversible sign change of the anomalous Hall effect in transition metal multilayers
〇Toshiaki Morita1, Tomohiro Koyama1,2,3,4, Daichi Chiba1,2,3,5 (1.SANKEN, Osaka Univ., 2.CSRN, Osaka Univ., 3.OTRI, Osaka Univ., 4.PRESTO, JST, 5.SRIS, Tohoku Univ.)
[14p-P10-8]Study on magnetic properties and magnetic domain structure of submicron-sized Fe-Ni-B amorphous particles
〇(D)Kazushi Wakabayashi1, Sho Muroga1, Takamichi Miyazaki1, Tetsunori Koda2, Yasushi Endo1 (1.Tohoku Univ., 2.NIT Oshima College)
[14p-P10-9]Investigation of operation for racetrack memory using Co/Ni multilayer wire
〇Hirokazu Hasegawa1, Yuichiro Kurokawa1, Hiromi Yuasa1 (1.Kyushu Univ.)
[14p-P10-10]Quantization of spin circular photogalvanic effect in altermagnetic Weyl semimetals
〇(DC)Hiroki Yoshida1, Libor Smejkal3, Shuichi Murakami1,2 (1.Science Tokyo, 2.WPI-SKCM2, 3.MPI-PKS)
[14p-P10-11]Design and Measurement of a Receiver for a Spin-wave Detection System
〇(M2)Jiaao Yu1, Yuyang Zhu1, Zhenyu Cheng1, Yuanxin Jia1, Md Shamim Sarker1, Hiroyasu Yamahara1, Munetoshi Seki1, Hitoshi Tabata1, Tetsuya Iizuka1 (1.The univ. of Tokyo)
[14p-P10-12]Research on Differential Type STT-MRAM Cell for Accelerator Based on Low-Power Digital CiM Architecture
〇Yongcheng Wang1,2, Tao Li1,3, Tetsuo Endoh1,3,2 (1.Tohoku Univ., 2.TU GP-Spin, 3.TU CIES)
[14p-P10-13]A Via-Programmable Neuron Array for Wearable AI-IoT Applications
〇Jaewon Shin1, Rei Sumikawa1, Dongzhu Li1, Mototsugu Hamada1, Atsutake Kosuge1 (1.UTokyo)
[14p-P10-14]Accelerating DNN Models with DPU: A Hardware-Software Co-Design Approach
〇JIAWEI Yu1, Atsutake Kosuge1, Hunga Amano1 (1.Kosuge Lab)
[14p-P10-15]An Example of Student Experiments for Entry of the Semiconductor Education with Agile-chip platform
〇(M1)Ryusei Shimoda1, Hideharu Amano1, Atsutake Kosuge1 (1.Univ. Tokyo)
[14p-P10-16]Hardware Acceleration Design for Object Detector in Semiconductor Design Hackathon
〇Yuxuan Pan1, Atsutake Kosuge1, Hideharu Amano1 (1.Univ. Tokyo)
[14p-P10-17]Comparative Analysis of High-Speed Time-Interleaved Digital-to-Analog Converters
〇(M2)Yunjie Chen1, Koji Asami2, Zolboo Byambadorj1, Akio Higo1, Tetsuya Iizuka1 (1.The Univ. of Tokyo, 2.Advantest Corp.)
[14p-P10-18]Optimization of SHA2 Operations for Signature Generation Hardware Compliant with FIPS 205 (SLH-DSA)
〇Yuta Takeshima1, Makoto Ikeda1 (1.Tokyo Univ.)
[14p-P10-19]Estimating Pairing Security and Hardware Implementation Cost by Design Automation
〇Momoko Fukuda1, Makoto Ikeda1 (1.Tokyo Univ.)
[14p-P10-20]Current variation in gate-all-around nanosheet channel induced by trapped charges at oxide/Si interface
〇Takefumi Kamioka1, Naoya Okada1, Koichi Fukuda1 (1.SFRC, AIST)
[14p-P10-21]Suppression of residual sulfur in PVD-MoS2 films by cold wall annealing with H2S
〇Naoki Matsunaga1, Atsushi Hori1, Hitoshi Wakabayashi1 (1.Science Tokyo)
[14p-P10-22]Fabrication of FeFET with ferroelectric AlScN film and In2O3 channel
〇JiaHong Lin1,2, TingTzu Kuo1,2, SiMeng Chen1, Hirofumi Nishida1, An Li1, Takuya Hoshii1, Hitoshi Wakabayashi1, TingChang Chang2, Kuniyuki Kakushima1 (1.Institute of Science Tokyo, 2.National Sun Yat-sen University)
[14p-P10-23]Research on Area Selective Atomic Layer Deposition of Ruthenium
〇Shogo Okugawa1, Rahman Gagi Tauhidur1, Ryo Yokogawa1,2, Yoshiteru Amemiya2, Akinobu Teramoto1,2,3 (1.Grad. Sch. of Adv. Eng., Hiroshima Univ, 2.RISE, Hiroshima Univ, 3.HiSOR, Hiroshima Univ)
[14p-P10-24]Development of ILD process for 3D inductor on RF power amplifier
〇Sadanori Arae1, Daiki Takayama1, Yukihiro Tsuji1, Ken Nakata1 (1.Sumitomo Electric Industries)
[14p-P10-25]Die-Level 3D-IC Fabrication Technology for 3D Heterogeneous Chiplet Integration
〇(D)Jiayi Shen1, Chang Liu1, Tetsu Tanaka1,2, Takafumi Fukushima1,2 (1.Graduate School of Engineering, Tohoku Univ., 2.Graduate School of Biomedical Engineering, Tohoku Univ.)