[15a-K101-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[15a-K101-10] Direct observation of electron capture processes in amphoteric defect states achieved by charge pumping in individual defects at MOS interface (16) -DOS analysis (II)-

〇Toshiaki Tsuchiya¹, Masahiro Hori¹, Yukinori Ono¹ (1.Shizuoka Univ.)

Keywords:

MOS interface defects,DOS of Pb0 and Pb1,correlation energy

本件ではMOS界面欠陥の準位密度DOSに及ぼすP_b1の影響，DOSにおける2つのピーク間の関係性と相関エネルギー，および，D-like準位の深さがA-like準位のDOSに及ぼす影響について考察する．