Session Details

[15a-K101-1~10]13.5 Semiconductor devices/ Interconnect/ Integration technologies

Sat. Mar 15, 2025 9:00 AM - 12:00 PM JST
Sat. Mar 15, 2025 12:00 AM - 3:00 AM UTC
K101 (Lecture Hall Bldg.)
Gento Yamahata(NTT BRL)
PRSonySemiconductor

[15a-K101-1][The 46th Best Review Paper Award Speech] Trends and prospects of semiconductor qubit research

〇Tetsuo Kodera1 (1.Science Tokyo)
Comment()

[15a-K101-2]Charge noise dependence on the electron number in a planar silicon quantum dot

〇Raisei Mizokuchi1, Riku Wada1, Ryutaro Matsuoka1, Itaru Yanagi2, Toshiyuki Mine2, Ryuta Tsuchiya2, Digh Hisamoto2, Hiroyuki Mizuno2, Shunsuke Ota1, Jun Yoneda1,3, Tetsuo Kodera1 (1.Science Tokyo, 2.Hitachi Ltd, 3.UTokyo)
Comment()

[15a-K101-3]Optimization of IQ-encoding conditions for RF-reflectometry

〇(B)Naoya Negami1, Raisei Mizokuchi1, Itaru Yanagi2, Toshiyuki Mine2, Ryuta Tsuchiya2, Digh Hisamoto2, Hiroyuki Mizuno2, Tetsuo Kodera1 (1.Science Tokyo, 2.R&D Group, Hitachi Ltd.)
Comment()

[15a-K101-4]Effects of photon assisted tunneling of parallel coupled double quantum dots

〇Tsuyoshi Hatano1, Toshihiro Kubo2, Yasuhiro Tokura3, Shinichi Amaha4, Soichiro Teraoka4, Seigo Tarucha4 (1.Nihon Univ., 2.NIT, Tsuyama College, 3.Tsukuba Univ., 4.Riken)
Comment()

[15a-K101-5]3D stacked spin qubit and TCAD simulations

〇Tetsufumi Tanamoto1 (1.Teikyo Univ.)
Comment()

[15a-K101-6]Study of interface trap density in Ge quantum devices

〇(D)Chutian Wen1, Yuto Arakawa1, Ryutaro Matsuoka1, Raisei Mizokuchi1, Jun Yoneda2, Tetsuo Kodera1 (1.Institute of Science Tokyo, 2.University of Tokyo)
Comment()

[15a-K101-7]Broadband Noise Characterization of MOSFETs and Its Temperature Dependence

〇Kenji Ohmori1, Shuhei Amakawa2, Michihiro Shintani3, Kazutoshi Kobayashi3 (1.Device Lab Inc., 2.Hiroshima Univ., 3.Kyoto Inst. Tech.)
Comment()

[15a-K101-8]Direct observation of electron capture processes in amphoteric defect states achieved by
charge pumping in individual defects at MOS interface (14) -Averaged CP current-

〇Toshiaki Tsuchiya1, Masahiro Hori1, Yukinori Ono1 (1.Shizuoka Univ.)
Comment()

[15a-K101-9]Direct observation of electron capture processes in amphoteric defect states achieved by charge pumping in individual defects at MOS interface (15) -DOS analysis (I)-

〇Toshiaki Tsuchiya1, Masahiro Hori1, Yukinori Ono1 (1.shizuoka Univ.)
Comment()

[15a-K101-10]Direct observation of electron capture processes in amphoteric defect states achieved by charge pumping in individual defects at MOS interface (16) -DOS analysis (II)-

〇Toshiaki Tsuchiya1, Masahiro Hori1, Yukinori Ono1 (1.Shizuoka Univ.)
Comment()