[15a-K101-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[15a-K101-5] 3D stacked spin qubit and TCAD simulations

〇Tetsufumi Tanamoto¹ (1.Teikyo Univ.)

Keywords:

nanosheet,spin qubit,three-dimensional transistor

Spin qubit systems are one of the promising candidates for Si based quantum computing. The conventional spin-qubit cell consists of control and readout units around a quantum dot (QD) in which excess electron works as spin qubit. Therefore, the integration of qubits is difficult because of many wires, and extra mechanism such as shuttling parts are required. We have proposed a new structure of stacked qubits, in which the gate-all-around (GAA) channel plays the role of both the control and readout, and the integration of qubits is feasible by extending the commercial silicon technologies. The qubit-QDs are placed in the gate insulator between the channel region and the gate electrodes like floating gates. Here, we show TCAD simulations to show how the extra electric charges in the QD affects the channel current.