[15a-K101-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[15a-K101-7] Broadband Noise Characterization of MOSFETs and Its Temperature Dependence

〇Kenji Ohmori¹, Shuhei Amakawa², Michihiro Shintani³, Kazutoshi Kobayashi³ (1.Device Lab Inc., 2.Hiroshima Univ., 3.Kyoto Inst. Tech.)

Keywords:

noise,cryogenic CMOS,quantum computing

Using a uniquely developed wideband noise system, we evaluated the noise characteristics of MOSFETs from room temperature down to cryogenic temperatures (3 K). This system enables noise measurements up to 500 MHz. It has experimentally revealed that the dominant sources of white noise are thermal noise at room temperature and shot noise at cryogenic temperatures. By conducting Wideband Noise Spectroscopy (WBNS) analysis at high frequencies, which have been challenging to observe until now, we classified the characteristics of electronic traps and evaluated their energy levels. Additionally, we report on the intriguing behavior of shallow levels (~20 meV) observed below 30 K.