Presentation Information

[15a-K302-8]Characteristics of Li-doped NiO thin films deposited by pressure gradient sputtering for back contact of CIGSe solar cells

〇Maski Hashimoto1, Yosuke Abe1, Takahito Nishimura1, Akira Yamada1 (1.Science Tokyo)

Keywords:

solar cell,sputtering

The conversion efficiency of CIGSe solar cells has been achieved up to 23.6 % by improving the bulk and buffer interface quality.To further improve the conversion efficiency, we propose to insert Li-doped NiO (NiO:Li) into the back contacts of CIGSe solar cells.In this talk, we report the results of sputtering NiO:Li thin films by the no pressure gradient sputtering method and the pressure gradient sputtering method, and their sputtering power dependence.

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