[15a-K310-1~8] 15.5 Group IV crystals and alloys

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[15a-K310-6] Ultra-thin Ge formation using segregation by Al/epitaxial Ge layer on Si(111) substrate

〇Taichi Okuda¹, Akio Ohta², Ryo Yokogawa^3,4,5, Masashi Kurosawa¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigehisa Shibayama¹ (1.Nagoya Univ., 2.Fukuoka Univ., 3.RISE, 4.Hiroshima Univ., 5.MREL)

Keywords:

Germanium,nanosheet,segregation