[15a-K310-1~8] 15.5 Group IV crystals and alloys | The 72nd JSAP Spring Meeting 2025

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Oral presentation15 Crystal Engineering : 15.5 Group IV crystals and alloys

[15a-K310-1~8]15.5 Group IV crystals and alloys

Sat. Mar 15, 2025 10:00 AM - 12:00 PM JST
Sat. Mar 15, 2025 1:00 AM - 3:00 AM UTC

K310 (Lecture Hall Bldg.)

Keisuke Arimoto(Univ. of Yamanashi)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K310-1]Multilayering Effects to Strain and Optical Properties of Dot-on-dot Ge Nanodots

〇Yuta Ito¹, Ryo Yokogawa^2,3,4, Wei-Chen Wen⁵, Yuji Yamamoto⁵, Yuiha Maeda¹, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.RISE, 4.Hiroshima Univ., 5.IHP)

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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[15a-K310-2]Topochemical methylation process during methylated germanane thin films formation

〇Atsuki Nakayama¹, Kazuho Matsumoto¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2, Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)English Presentation

[15a-K310-3]Effect of Plasma in Molecular Beam Deposited Germanium-Sulfur Thin Films

〇(DC)Ahmed Mahmoud^1,2, Ryo Matsumura¹, Naoki Fukata^1,2 (1.NIMS-MANA, 2.Univ. of Tsukuba)

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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)English Presentation

[15a-K310-4]The birefringent effect in laterally grown spherulite-like GeS thin films

〇Qinqiang Zhang¹, Ryo Matsumura¹, Naoki Fukata^1,2 (1.NIMS, 2.Univ. of Tsukuba)

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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K310-5]Formation of crystallized GeSn nanosheets formed using surface segregation method

〇Taiga Matsumoto¹, Ohta Akio², Ryo Yokogawa^3,4,5, Masashi Kurosawa¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigehisa Shibayama¹ (1.Nagoya Univ., 2.Fukuoka Univ., 3.RISE, 4.Hiroshima Univ., 5.MREL)

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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[15a-K310-6]Ultra-thin Ge formation using segregation by Al/epitaxial Ge layer on Si(111) substrate

〇Taichi Okuda¹, Akio Ohta², Ryo Yokogawa^3,4,5, Masashi Kurosawa¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigehisa Shibayama¹ (1.Nagoya Univ., 2.Fukuoka Univ., 3.RISE, 4.Hiroshima Univ., 5.MREL)

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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[15a-K310-7]Investigation of annealing conditions for the reduction of the crack density in high-Ge-content SiGe films grown on Si substrates

〇Kohei Ito¹, Ryoji Katsube¹, Yuki Imai², Satoru Miyamoto^1,2, Shota Suzuki³, Hideaki Minamiyama³, Marwan Dhamrin^3,4, Noritaka Usami^1,2,5 (1.Grad.Eng., Nagoya Univ., 2.InFuS Nagoya Univ., 3.Toyo Aluminium K.K., 4.Grad.Eng., Osaka Univ., 5.IMaSS Nagoya Univ.)

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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[15a-K310-8]Importance of zero cross-point (Cp = 0) control between the vacancy and interstitial Si atom concentration curves to obtain a perfect Si ingot using Si melt growth

〇Kazuo Nakajima¹, Masami Nakanishi², Martin Su², Chuck Hsu² (1.IMR TohokuUniv., 2.GlobalWafers Co., Ltd.)

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