[15a-K310-1~8] 15.5 Group IV crystals and alloys

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[15a-K310-7] Investigation of annealing conditions for the reduction of the crack density in high-Ge-content SiGe films grown on Si substrates

〇Kohei Ito¹, Ryoji Katsube¹, Yuki Imai², Satoru Miyamoto^1,2, Shota Suzuki³, Hideaki Minamiyama³, Marwan Dhamrin^3,4, Noritaka Usami^1,2,5 (1.Grad.Eng., Nagoya Univ., 2.InFuS Nagoya Univ., 3.Toyo Aluminium K.K., 4.Grad.Eng., Osaka Univ., 5.IMaSS Nagoya Univ.)

Keywords:

silicon-germanium,epitaxial growth,crack