[15a-K310-1~8] 15.5 Group IV crystals and alloys

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[15a-K310-8] Importance of zero cross-point (Cp = 0) control between the vacancy and interstitial Si atom concentration curves to obtain a perfect Si ingot using Si melt growth

〇Kazuo Nakajima¹, Masami Nakanishi², Martin Su², Chuck Hsu² (1.IMR TohokuUniv., 2.GlobalWafers Co., Ltd.)

Keywords:

Crystal Growth of Si,Point defect free,Critical point

The cross-point (Cp), which appears in the vacancy (C_V) and interstitial Si atom (C_I) concentration curves provides a final goal to obtain a defect-free Si ingot using general Si melt growth. The concentration at the Cp point becomes smaller as G becomes smaller and finally becomes zero (Cp = 0), in which C_V and C_I are practically zero (C_V = C_I = 0). The growth condition to obtain a defect-free Si ingot can be demonstrated using the Cp = 0 point, which is fully compatible with the perfect critical point.