[15a-K401-1~8] 15.4 III-V-group nitride crystals

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[15a-K401-3] Evaluation of Electrical Properties of Mg Ion-implanted GaN Single Crystals using THz-TDSE (V)

〇Takashi Fujii^1,2, DingDing Wang¹, Toshiyuki Iwamoto², Atsushi Suyama³, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.PNP, 3.ITC)

Keywords:

THz,Ion Implantting,GaN

We aim to establish a technology to realize a p-type conductive layer by activated annealing under high temperature conditions where an AlN protective film is formed after implantation of Mg ions on a GaN substrate. THz-TDSE is applied to measure the electrical characteristics of this p-type conductive layer, which is non-contact, non-destructive, and does not require peeling of the AlN protective film. Until now, the injection layer was analyzed as a uniform film, but the analysis was performed assuming the presence of an electric conductive layer at the bottom of the injection layer. As a result, it was found that the existence of the lower layer should be taken into account