The 72nd JSAP Spring Meeting 2025
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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[15a-K401-1~8]15.4 III-V-group nitride crystals

Sat. Mar 15, 2025 9:00 AM - 11:30 AM JST
Sat. Mar 15, 2025 12:00 AM - 2:30 AM UTC
K401 (Lecture Hall Bldg.)
Takuya Maeda(Tokyo Univ.), Shigeyoshi Usami(阪大)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[15a-K401-1]Investigation on sputtering degenerate n+-GaN (d-GaN) ohmic contacts
for AlGaN/GaN HEMTs

〇Kaito Fujisawa1, Kohei Ueno1, Hiroshi Fujioka1 (1.IIS)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K401-2]Development of sputtering Al-rich AlGaN multi-channel nanowire transistor with n++Al-rich AlGaN ohmic contacts

〇Takao Kozaka1, Kohei Ueno1, Hiroshi Fujioka1 (1.IIS)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[15a-K401-3]Evaluation of Electrical Properties of Mg Ion-implanted GaN Single Crystals using THz-TDSE (V)

〇Takashi Fujii1,2, DingDing Wang1, Toshiyuki Iwamoto2, Atsushi Suyama3, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.PNP, 3.ITC)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K401-4]Reduction of On-resistance in Pseudomorphic AlN/GaN/AlN HEMT on AlN Substrate with Critical Electric Field of 2 MV/cm

〇Taegi Lee1, Akira Yoshikawa1,3, Sho Sugiyama1, Manabu Arai3, Yuji Ando2,3, Jun Suda2,3, Hiroshi Amano2,3 (1.Asahi Kasei Corp., 2.Nagoya Univ., 3.IMaSS)
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10:15 AM - 10:45 AM JST(1:15 AM - 1:45 AM UTC)

[15a-K401-5][INVITED] Growth of N-polar AlN and its application to GaN/AlN HEMTs

〇Narihito D. Okada1, Aina Hiyama1, Kai Fujii1, Taisei Kimoto1, Ryosuke Ninoki1, Fumiya Yamanaka1, Satoshi Kurai1, Yoichi Yamada1 (1.Yamaguchi Univ.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K401-6]Effect of annealing on the performance of N-polar GaN HEMT devices

〇(M1C)Ryosuke Ninoki1, Nobuteru Hirata1, Aina Hiyama Zazuli1, Kai Fujii1, Taisei Kimoto1, Satoshi Kurai1, Narihito Okada1, Youichi Yamada1 (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K401-7]Effect of External Stress on Electrical Properties of N-polar GaN/Al0.9Ga0.1N/AlN HEMT

〇(DC)Aina Hiyama Zazuli1, Kai Fujii1, Ryosuke Ninoki1, Taisei Kimoto1, Fumiya Yamanaka1, Nobuteru Hirata1, Haruki Danbata1, Amane Hayashiuchi1, Satoshi Kurai1, Narihito Okada1, Yoichi Yamada1 (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)English Presentation

[15a-K401-8]N-polar AlN-based GaN channel on sapphire for high electron mobility transistors

〇Markus Pristovsek1, Ituski Furuhashi1, Xu Yang1, Chengzhi Zhang2, Matthew D. Smith2, Martin Kuball2 (1.Nagoya Univ., 2.Univ. of Bristol)
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