[15a-K401-1~8] 15.4 III-V-group nitride crystals

10:15 AM - 10:45 AM JST(1:15 AM - 1:45 AM UTC)

[15a-K401-5] [INVITED] Growth of N-polar AlN and its application to GaN/AlN HEMTs

〇Narihito D. Okada¹, Aina Hiyama¹, Kai Fujii¹, Taisei Kimoto¹, Ryosuke Ninoki¹, Fumiya Yamanaka¹, Satoshi Kurai¹, Yoichi Yamada¹ (1.Yamaguchi Univ.)

Keywords:

semiconductor,HEMT,AlN

N-polar GaN/AlN high-electron-mobility transistor (HEMT) can generate two-dimensional electron gas (2DEG) without the use of an AlN cap layer. Moreover, by employing AlN as the underlying substrate, it has the potential to achieve high power, high breakdown voltage, and high-temperature operation compared to the conventional AlGaN/GaN HEMT structure. In our laboratory, we have demonstrated the operation of N-polar GaN/AlGaN/AlN HEMTs fabricated by metal-organic vapor phase epitaxy. In this presentation, we will discuss the crystal growth of N-polar AlN on sapphire substrates and its application to N-polar GaN/AlN HEMTs in detail.