[15a-K401-1~8] 15.4 III-V-group nitride crystals

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K401-6] Effect of annealing on the performance of N-polar GaN HEMT devices

〇(M1C)Ryosuke Ninoki¹, Nobuteru Hirata¹, Aina Hiyama Zazuli¹, Kai Fujii¹, Taisei Kimoto¹, Satoshi Kurai¹, Narihito Okada¹, Youichi Yamada¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ.)

Keywords:

N-polar GaN