[15a-K403-1~12] 13.7 Compound and power devices, process technology and characterization

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K403-11] Characteristics of rutile-type GeO₂ Schottky barrier diode.

〇Yuri Shimizu^1,2, Takayoshi Oshima³, Toyosuke Ibi^1,4, Isao Takahashi¹, Kentaro Kaneko^1,4 (1.Patentix Inc., 2.Col. of Sci. & Eng. Ritsumeikan Univ., 3.NIMS, 4.RISA)

Keywords:

r-GeO2,Ultra Wide Bandgap,Power device