The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[15a-K403-1~12]13.7 Compound and power devices, process technology and characterization

Sat. Mar 15, 2025 9:00 AM - 12:45 PM JST
Sat. Mar 15, 2025 12:00 AM - 3:45 AM UTC
K403 (Lecture Hall Bldg.)
Takuji Hosoi(Kwansei Gakuin Univ.)
9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)English Presentation

[15a-K403-1][The 46th Best Review Paper Award Speech] Recent progress of Ga2O3 power technology: large-area devices, packaging and applications

〇Yuan Qin1 (1.Virginia Tech)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K403-2]Electrical Properties of Nitrogen-Doped β-Ga2O3 (010) Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

〇(B)Yusuke Teramura1, Kura Nakaoka1, Shoki Taniguchi1, Jin Inajima1, Tomoki Uehara1, Kohki Tsujimoto1, Satoko Honda1, Takumi Ohtsuki2, Takafumi Kamimura2, Masataka Higashiwaki1,2 (1.Osaka Metropolitan Univ., 2.NICT)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[15a-K403-3]High-Density Si Doping Into Ga2O3 by Hot Implantation (1) – Structural Characterization –

〇Shun Konno1, Daisuke Matsuo1, Kotaro Yagi2, Shinya Takemura1, Kosuke Usui1, Yasunori Andoh3, Kohei Tanaka1, Masataka Higashiwaki2,4 (1.Nissin Ion Equipment, 2.Osaka Metropolitan Univ., 3.Nissin Electric, 4.NICT)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K403-4]High-Density Si Doping Into Ga2O3 by Hot Implantation (2) - Electrical Properties -

〇(M1)Kotaro Yagi1, Daisuke Matsuo2, Shun Konno2, Shinya Takemura2, Kosuke Usui2, Yasunori Andoh3, Kohei Tanaka2, Masataka Higashiwaki1,4 (1.Osaka Metropolitan Univ., 2.Nissin Ion Equipment, 3.Nissin Electric, 4.NICT)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[15a-K403-5]Growth of Ga2O3 Thin Films on the Substrates with High Concentration Fe Ion Implantation near the Surface

〇Takumi Ohtsuki1, Masataka Higashiwaki1,2 (1.NICT, 2.Osaka Metropolitan Univ.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[15a-K403-6]Laser doping of Sn into β-Ga2O3 using SnO2 thin films

〇(M1)Kazuho Ryu1, Misa Beppu1, Yohei Tanaka2, Keita Katayama1, Hisato Yabuta1,2 (1.ISEE,Kyushu Univ., 2.Gigaphoton NEXT GLP, Kyushu Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K403-7]Improvement of ALD-Al2O3/β-Ga2O3 (001) MOS interface characteristics by substrate surface treatment with O3

〇Hiroyasu Maekawa1, Takashi Onaya2, Koji Kita1,2 (1.School of Eng., The Univ. of Tokyo, 2.GSFS, The Univ. of Tokyo)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[15a-K403-8]Consideration on the effects of surface treatment and dielectric layer formation on chemical states of β-Ga2O3 in near-surface region estimated from changes in lattice constant

〇Koki Katagiri1, Takashi Onaya1, Koji Kita1 (1.GSFS, The Univ. of Tokyo)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[15a-K403-9]Demonstration of β-Ga2O3 FinFET with power figure of merit of 1.23 GW/cm2

〇Daiki Wakimoto1, Chia-Hung Lin1, Kentaro Ema1, Yuki Ueda1, Hironobu Miyamoto1, Kohei Sasaki1, Akito Kuramata1 (1.Novel Crystal, inc.)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K403-10]Design of Rectenna Circuit Using High-Frequency Ga2O3 Schottky Barrier Diodes for Applications to 24-GHz Microwave Wireless Power Transmission

〇(M1)Yudai Suehiro1, Kohki Eguchi1, Yuto Tabata1, Takuya Tsutsumi1, Yasuo Ohno1,2, Masataka Higashiwaki1,3 (1.Osaka Metropolitan Univ., 2.Laser Systems Inc., 3.NICT)
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12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K403-11]Characteristics of rutile-type GeO2 Schottky barrier diode.

〇Yuri Shimizu1,2, Takayoshi Oshima3, Toyosuke Ibi1,4, Isao Takahashi1, Kentaro Kaneko1,4 (1.Patentix Inc., 2.Col. of Sci. & Eng. Ritsumeikan Univ., 3.NIMS, 4.RISA)
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12:15 PM - 12:45 PM JST(3:15 AM - 3:45 AM UTC)English Presentation

[15a-K403-12][The 46th Paper Award Speech] Vertical β-Ga2O3 Schottky Barrier Diodes With Trench Staircase Field Plate

〇Sandeep Kumar1, Hisashi Murakami2, Yoshinao Kumagai2, Masataka Higashiwaki3 (1.NICT, 2.Tokyo Univ. of Agriculture and Technology, 3.Osaka Metropolitan Univ.)
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