[15a-K403-1~12] 13.7 Compound and power devices, process technology and characterization

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[15a-K403-5] Growth of Ga₂O₃ Thin Films on the Substrates with High Concentration Fe Ion Implantation near the Surface

〇Takumi Ohtsuki¹, Masataka Higashiwaki^1,2 (1.NICT, 2.Osaka Metropolitan Univ.)

Keywords:

gallium oxide,ion implantation

In the development of lateral radio-frequency Ga₂O₃ MOSFETs for application to wireless communication devices in harsh environments, drain current leakage is often a problem. This is because Si derived from siloxane present in the atmosphere accumulates at the substrate/epilayer interface and forms a leakage path. In this study, in order to counteract the effect of Si (donor) present at the substrate/epilayer interface, we attempted to grow a thin film after ion implantation of high concentration Fe (acceptor) near the substrate surface.