[15a-K403-1~12] 13.7 Compound and power devices, process technology and characterization

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K403-7] Improvement of ALD-Al₂O₃/β-Ga₂O₃ (001) MOS interface characteristics by substrate surface treatment with O₃

〇Hiroyasu Maekawa¹, Takashi Onaya², Koji Kita^1,2 (1.School of Eng., The Univ. of Tokyo, 2.GSFS, The Univ. of Tokyo)

Keywords:

Ga2O3,O3,interface

The interface characteristics of β-Ga₂O₃ MOS are significantly influenced by the choice of insulator material and the annealing process. In this study, by depositing ALD-Al₂O₃ on a β-Ga₂O₃ (001) substrate and incorporating O₃ oxidation, we successfully reduced the interface state density (D_it) to around 1×10¹¹ cm^-2eV^-1. Furthermore, we demonstrated that high-temperature PDA at 1000°C greatly improves the device properties when an SiO₂ layer is inserted.