[15a-K403-1~12] 13.7 Compound and power devices, process technology and characterization

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[15a-K403-9] Demonstration of β-Ga₂O₃ FinFET with power figure of merit of 1.23 GW/cm²

〇Daiki Wakimoto¹, Chia-Hung Lin¹, Kentaro Ema¹, Yuki Ueda¹, Hironobu Miyamoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal, inc.)

Keywords:

beta-Ga2O3,vertical MOS transistor,power figure of merit

In this study, we report that we have fabricated a β-Ga₂O₃ multi-FinFET with a modified gate edge, and achieved the world's highest power figure of merit for a β-Ga₂O₃ FET, 1.23 GW/cm². The FinFET was fabricated using an epitaxial wafer with a donor concentration of 7.5×10¹⁵ cm^-3 and a thickness of 55 µm, and the threshold voltage was +1.1 V, the maximum current density was 217 A/cm², the specific on-resistance was 21.6 mΩcm², and the breakdown voltage was 5150 V.The current density and specific on-resistance are values normalized by the source electrode area (50 µm × 60 µm).