[15a-K501-1~4] 22.1 Joint Session M "Phonon Engineering"

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[15a-K501-2] Thermal Conductivity Reduction by SiGe Super-thin Film Interface Layers

〇Ayaka Odashima^1,2, Ryoto Yanagisawa¹, Kentarou Sawano^1,2, Masahiro Nomura¹ (1.IIS Univ. of Tokyo, 2.Tokyo City Univ.)

Keywords:

Silicon Germanium,thermoelectric device