[15a-K501-1~4] 22.1 Joint Session M "Phonon Engineering"

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[15a-K501-3] Thermal conductivity reduction in epitaxial SnO₂ film/r-Al₂O₃ with selectively manipulated O^2- anion

〇Takafumi Ishibe^1,2, Nobuyasu Naruse³, Yutaka Mera³, Yuichiro Yamashita⁴, Yoshiaki Nakamura^1,2 (1.Grad. School of Eng. Sci., Osaka Univ., 2.OTRI, Osaka Univ., 3.Shiga Univ. Medical Science, 4.AIST)

Keywords:

Thermoelectric material,Oxide,Thermal conductivity

Wide bandgap SnO₂, which exhibits high electrical conductivity, is drawing much attention as transparent thermoelectric material. We have achieved low thermal conductivity while keeping high electrical conductivity by domain engineering in SnO₂ film. However, further reduction of thermal conductivity is required for social application. This study focuses on O^2- anion, which does not compose conduction band and can bring resonant level effect. We are aiming at drastically reducing thermal conductivity while keeping high thermoelectric power factor by selectively manipulating O^2- anion.