[15a-K509-1~6] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K509-2] Modeling of Physical Phenomenon for Wafer Warpage Control Technology Using Rapid Thermal Anneal in 3D Flash Memory Manufacturing Process

〇Takuto Tanaka¹, Tsunahito Tabuchi¹, Takamichi Tsuchiya¹, Akira Matsumura¹, Hideyuki Yamawaki¹ (1.KIOXIA Corp.)

Keywords:

3D flash memory,ON layers,wafer warpage

As society becomes increasingly digitalized and the amount of data to be stored increases at an explosive rate in recent years, there is an ever-increasing demand for higher-capacity 3D flash memory. A key measure for higher-capacity 3D flash memory is to increase the number of word-line stacking, but a side effect is that wafer warpage, causing defects in the manufacturing process. In this study, the SiO2-SiN interface structure of ON layers was investigated and analyzed by X-Ray Reflectivity to model the physical phenomenon of “temporary convex shape of wafer warpage” caused by Rapid Thermal Anneal.