The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15a-K509-1~6]13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sat. Mar 15, 2025 10:00 AM - 11:30 AM JST
Sat. Mar 15, 2025 1:00 AM - 2:30 AM UTC
K509 (Lecture Hall Bldg.)
Takashi Hasunuma(Univ. of Tsukuba)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K509-1]Analysis of Impurity Concentration Dependence in MOS Structures Using Operando Bias-Application Measurements by Laboratory HAXPES

〇Takuya Minowa1, Koji Usuda2, Ryo Yokogawa2,3,4, Atsushi Ogura1,2 (1.Meiji Univ., 2.MREL, 3.RISE, 4.Hiroshima Univ.)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K509-2]Modeling of Physical Phenomenon for Wafer Warpage Control Technology Using Rapid Thermal Anneal in 3D Flash Memory Manufacturing Process

〇Takuto Tanaka1, Tsunahito Tabuchi1, Takamichi Tsuchiya1, Akira Matsumura1, Hideyuki Yamawaki1 (1.KIOXIA Corp.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[15a-K509-3]Investigation of Two-Step Deposition Method for Ferroelectric HfNx Thin Films on Si(100) Substrates

〇Kaimu Hamada1, Kangbai Li1, Shun-ichiro Ohmi1 (1.Science Tokyo)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K509-4]Efficient method for predicting liquid film flow during spin coating

〇(M1)Kotaro Yamaoka1, Koichi Sawada2, Taichi Takashima2, Yoshinori Takagi2, Takehiro Sano3, Takeshi Saruwatari2, Takashi Ikeuchi3, Suguru Shiratori1 (1.Tokyo City Univ., 2.SCREEN Holdings Co., Ltd., 3.SCREEN Advanced System Solutions Co., Ltd.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K509-5]Molecular dynamics study of a-Al2O3/GaN interface using machine learning force field

〇Koki Sato1, Mutsunori Uenuma2, Ryousuke Jinnouchi1, Ryoji Asahi1 (1.Nagoya Univ., 2.AIST)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[15a-K509-6]Analysis of Oxidation Mechanism of Group IV Semiconductor Substrates by Reactive Molecular Dynamics

〇(M2)Kenta Sekiguchi1,2, Daisuke Ohori2, Kazuhiko Endo2, Takashi Tokumasu2 (1.Graduate School of Eng., Tohoku Univ., 2.Inst. of Fluid Science, Tohoku Univ.)
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