[15a-K509-1~6] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[15a-K509-3] Investigation of Two-Step Deposition Method for Ferroelectric HfN_x Thin Films on Si(100) Substrates

〇Kaimu Hamada¹, Kangbai Li¹, Shun-ichiro Ohmi¹ (1.Science Tokyo)

Keywords:

Hafnium nitride,ECR plasma sputtering,Two-step deposition method

In this study, we investigated the improvement of crystallinity near the HfN/Si(100) interface by the two-step deposition method, in which an initial layer of HfN_x was deposited on Si(100) substrates with controlling the nitrogen concentration by ECR sputtering followed by the HfN_1.15 deposition. The remnant polarization (2P_r) increased from 6.10 μC/cm² to 6.74 μC/cm² after annealing at 400°C/5min, compared to the conventional MFS diode fabricated with a HfN_1.15 single layer.