[15p-K301-1~12] 17.3 Layered materials

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[15p-K301-3] Gate length dependence of high frequency characteristics in TMDC semiconductor transistors

〇Akiko Ueda¹, Hiroshi Imamura¹, Hirokazu Fukidome² (1.AIST, 2.RIEC, Tohoku Univ.)

Keywords:

High frequency applications,Transition metal dichalcogenides,Nonequilibrium Green function method

Transition metal dichalcogenide (TMDC) semiconductor transistors are regarded as potential candidates for RF applications in the THz range due to their excellent electrical controllability and scalability to short channels. This study examines the high-frequency characteristics of MoS₂ transistors with ultra-short gate lengths using the NEGF method and the Poisson equation. For a fixed channel length of 10 nm, it is shown that even with a gate length of 1.7 nm, the cutoff frequency can remain in the THz range under ideal conditions. We also discuss the maximum frequency achievable when graphene is used as the gate material.