[15p-K301-1~12] 17.3 Layered materials

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-K301-4] Charge-Injection Barrier Switching of MoS₂ Field-Effect Transistors by Water-Confining Molecular Deposition Layers

Hiroki Kii¹, 〇Ryo Nouchi^1,2 (1.Osaka Pref. Univ., 2.Osaka Metro. Univ.)

Keywords:

two-dimensional semiconductor,threshold-voltage shift,charge-injection barrier

Two-dimensional materials obtained by exfoliation of layered crystals have a basal plane with a small number of dangling bonds, which makes it possible to easily modulate various properties by depositing different materials on the surface. For example, the threshold voltage of field-effect transistors (FETs) can be controlled using surface-deposition layers that cause charge transfer. The use of deposition layers that can be modulated by external fields opens the way for dynamic control of device characteristics. In this talk, we report an example of dynamic control of multilayer MoS₂ FETs using an adsorbed layer of molecules with permanent dipoles that can effectively confine water molecules from ambient air.