[15p-K301-1~12] 17.3 Layered materials

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[15p-K301-6] Electrode dependence of TFT characteristics of Molybdenum sulfide thin-film transistors

〇Masamichi Tsuchida¹, Li Kecheng¹, Xu Chenghao¹, Kousaku Shimizu¹ (1.Nihon Univ.)

Keywords:

two dimensional material,Molybdenum sulfide,Thin-film transistors

In recent years, layered materials, transition metal dichalcogenides (TMDCs), have attracted attention. We mainly study molybdenum sulfide (MoS₂). These are usually treated as single crystals, but in this study, we prepared thin films by sputtering in order to fabricate them on a large area. In our previous report, we reported that p-type molybdenum sulfide thin films were converted to n-type by atomic hydrogen treatment. In this report, we fabricated thin film transistors with Ti or Cu electrodes to evaluate the electrode dependence of MoS₂ thin film transistors. The transfer characteristics of each electrode when the back pressure during MoS₂ film formation was 2.0×10^-4 Pa, the transfer characteristics when the electrode was a hydrogenated or oxygenated Ti substrate, and the transfer characteristics when the electrode was a hydrogenated or oxygenated Cu substrate are shown. Both electrodes showed n-type characteristics. When Ti was used as the electrode, n-type was not confirmed even after oxygenation, but when Cu was used, p-type characteristics were confirmed. From the above, it was possible to adjust the transmission characteristics by changing the work function of Ti or Cu.