Presentation Information

[15p-K301-6]Electrode dependence of TFT characteristics of Molybdenum sulfide thin-film transistors

〇Masamichi Tsuchida1, Li Kecheng1, Xu Chenghao1, Kousaku Shimizu1 (1.Nihon Univ.)

Keywords:

two dimensional material,Molybdenum sulfide,Thin-film transistors

In recent years, layered materials, transition metal dichalcogenides (TMDCs), have attracted attention. We mainly study molybdenum sulfide (MoS2). These are usually treated as single crystals, but in this study, we prepared thin films by sputtering in order to fabricate them on a large area. In our previous report, we reported that p-type molybdenum sulfide thin films were converted to n-type by atomic hydrogen treatment. In this report, we fabricated thin film transistors with Ti or Cu electrodes to evaluate the electrode dependence of MoS2 thin film transistors. The transfer characteristics of each electrode when the back pressure during MoS2 film formation was 2.0×10-4 Pa, the transfer characteristics when the electrode was a hydrogenated or oxygenated Ti substrate, and the transfer characteristics when the electrode was a hydrogenated or oxygenated Cu substrate are shown. Both electrodes showed n-type characteristics. When Ti was used as the electrode, n-type was not confirmed even after oxygenation, but when Cu was used, p-type characteristics were confirmed. From the above, it was possible to adjust the transmission characteristics by changing the work function of Ti or Cu.

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