[15p-K301-1~12] 17.3 Layered materials

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-K301-9] Device characterization of ultra small MoS₂ single grain grown by MOCVD

〇KEISUKE ATSUMI¹, LI SHUHONG¹, NISHIMURA TOMONORI¹, KANAHASHI KAITO¹, SAKUMA YOSHIKI², NAGASHIO KOSUKE¹ (1.Tokyo univ., 2.NIMS)

Keywords:

MOCVD,MoS2,Ultra small

Recently, wafer-scale deposition and integration of devices by Metal-Organic CVD (MOCVD) using a gas source have been investigated. There are no reports of device mobility above 50 cm2/Vs yet. In order to optimize the deposition conditions for improving the mobility, it is necessary to compare the properties of continuous film devices including grain boundaries with those of single grain devices. In this presentation, we report on the fabrication and characterization of MOCVD single grain devices fabricated by EB writing.