Presentation Information
[15p-K301-9]Device characterization of ultra small MoS2 single grain grown by MOCVD
〇KEISUKE ATSUMI1, LI SHUHONG1, NISHIMURA TOMONORI1, KANAHASHI KAITO1, SAKUMA YOSHIKI2, NAGASHIO KOSUKE1 (1.Tokyo univ., 2.NIMS)
Keywords:
MOCVD,MoS2,Ultra small
Recently, wafer-scale deposition and integration of devices by Metal-Organic CVD (MOCVD) using a gas source have been investigated. There are no reports of device mobility above 50 cm2/Vs yet. In order to optimize the deposition conditions for improving the mobility, it is necessary to compare the properties of continuous film devices including grain boundaries with those of single grain devices. In this presentation, we report on the fabrication and characterization of MOCVD single grain devices fabricated by EB writing.
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