[15p-K310-1~9] 15.5 Group IV crystals and alloys

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[15p-K310-2] Effects of deposition temperature on solid-phase crystallization of InGaAs thin films

〇(B)Yutaka Kiyono¹, Koki Nozawa¹, Seo Jisol¹, Takashi Suemasu¹, Kaoru Toko¹ (1.University of Tsukuba)

Keywords:

semiconductor,crystal growth

In this study, solid-phase crystallization (SPC), a promising synthesis method for high-mobility polycrystalline group IV materials, was applied to InGaAs to achieve high-electron-mobility (μ_n) polycrystalline InGaAs thin films. As a result, it was found that the deposition temperature (T_d) of the InGaAs thin films is a critical parameter. Additionally, high-pressure SPC (HP-SPC) enabled the realization of high μ_n through low-temperature annealing.