The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation15 Crystal Engineering : 15.5 Group IV crystals and alloys

[15p-K310-1~9]15.5 Group IV crystals and alloys

Sat. Mar 15, 2025 2:00 PM - 4:15 PM JST
Sat. Mar 15, 2025 5:00 AM - 7:15 AM UTC
K310 (Lecture Hall Bldg.)
Ryo Matsumura(National Institute for Materials Science (NIMS))
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[15p-K310-1]Synthesis of polycrystalline thin film of Mg-IV alloy compounds for thermoelectric applications

〇Takenori Nakajima1, Takamitsu Ishiyama1, Shintaro Maeda1, Takashi Suemasu1, Kaoru Toko1 (1.Univ. of Tsukuba)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[15p-K310-2]Effects of deposition temperature on solid-phase crystallization of InGaAs thin films

〇(B)Yutaka Kiyono1, Koki Nozawa1, Seo Jisol1, Takashi Suemasu1, Kaoru Toko1 (1.University of Tsukuba)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-K310-3]Metal-induced lateral crystallization of amorphous Ge under high pressure annealing

〇(B)Naoto Mitsunaga1, Shota Kikumoto1, Taiyo Nakahara1, Haruki Nonaka1, Kenichiro Takakura1, Isao Tsunoda1 (1.NIT, Kumamoto College)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-K310-4]Improved mobility of p-channel GeSn thin-film transistors using multilayered solid-phase crystallization

〇Shintaro Maeda1,2, Kenta Moto3, Linyu Huang3, Atsuki Morimoto3, Keisuke Yamamoto3, Takashi Suemasu1, Kaoru Toko1 (1.Univ. of Tsukuba, 2.JSPS Research Fellow, 3.Kyushu Univ.)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-K310-5]Growth of III/V co-doped Ge crystals for high n-type doping

〇(M1C)Gaku Ishizu1, Haruto Koto1, Tomo Horota1, Yuto Kawabata1, Yuta Sasaki1, Yasuhiko Ishikawa1, Keisuke Yamane1 (1.Toyohashi Tech.)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[15p-K310-6]Effect of deposition rate on Si1−xSnx epitaxial growth on Si(001) substrate

〇Sosei Ito1, Shigehisa Shibayama1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-K310-7]Epitaxial growth of Ge0.5Sn0.5 and indication of Ge-Sn ordered bonding formation

〇Kaito Shibata1, Shigehisa Shibayama1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[15p-K310-8]Effect of wafer inclination on the surface morphology of SiGe grown on Si(110) wafer

〇(B)Yuta Fujimoto1, Monami Yokota1, Naoyuki Wada2, Akihiro Suzuki2, Kazuhito Matsukawa2, Koji Matsumoto2, Hiroaki Yamamoto2, Kosuke O. Hara1, Junji Yamanaka1, Keisuke Arimoto1 (1.Univ. of Yamanashi, 2.SUMCO Corp.)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[15p-K310-9]Fabrication of LEDs on GOI substrates formed by bonding method and their light emitting properties

〇RYOGA YOKOKI1, Mayu Aikawa1, Hiroshi Imai1, Kentarou Sawano1 (1.Tokyo City Univ.)
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