[15p-K310-1~9] 15.5 Group IV crystals and alloys

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[15p-K310-8] Effect of wafer inclination on the surface morphology of SiGe grown on Si(110) wafer

〇(B)Yuta Fujimoto¹, Monami Yokota¹, Naoyuki Wada², Akihiro Suzuki², Kazuhito Matsukawa², Koji Matsumoto², Hiroaki Yamamoto², Kosuke O. Hara¹, Junji Yamanaka¹, Keisuke Arimoto¹ (1.Univ. of Yamanashi, 2.SUMCO Corp.)

Keywords:

SiGe,Si(110)

Improved hole mobility is required for nanosheet transistors; the use of Si(110) wafers is one of the solutions, but it is known to be difficult to form flat SiGe on Si(110) substrates. In particular, pits with rhombic-shaped apertures often occur and their suppression is important. In this study, the relationship between the formation of pits on SiGe formed on Si(110) and the surface orientation inclination was investigated.