[15p-K401-1~15] 15.4 III-V-group nitride crystals

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[15p-K401-10] Polarization-Field-Induced SHG Device with AlGaN/AlN Strained-Layer Superlattice

〇Tomoyuki Tanikawa^1,2, Shahzeb Malik^1,2, Kanako Shojiki³, Masaaki Ito^1,2, Ryo Momosaki^1,2, Hiroto Honda^1,2, Hideto Miyake⁴, Masahiro Uemukai^1,2, Ryuji Katayama^1,2 (1.Osaka Univ., 2.OTRI Spin, Osaka Univ., 3.Kyoto Univ., 4.Mie Univ.)

Keywords:

second harmonic generation,AlGaN,strained-layer superlattice

In this study, we demonstrated 230 nm far ultraviolet second harmonic generation from AlGaN/AlN strained layer superlattices. Device design, epitaxial growth using sputtering and metalorganic vapor epitaxy, and nonlinear optical properties will be presented.