[15p-K401-1~15] 15.4 III-V-group nitride crystals

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[15p-K401-5] [The 57th Young Scientist Presentation Award Speech] Device performance with sharp heterojunction interface applied in AlGaN-based UV-B LDs

〇Takumu Saito¹, Rintaro Miyake¹, Ryoya Yamada¹, Yoshinori Imoto¹, Shundai Maruyama¹, Yusuke Sasaki¹, Shogo Karino¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

Keywords:

nitride,UV LD,metal organic vapor phase epitaxy

We successfully achieved room-temperature pulsed operation of an AlGaN-based UV-B laser diode (LD) with a peak optical output of 150 mW. However, the carrier injection efficiency (ηi) remains around 10%, and improving ηi is a key challenge for achieving higher output power. One possible cause is the unintended Al compositional gradient layer formed at the interface between the electron blocking layer and the guiding layer. In this study, we optimized the growth conditions for sharp heterointerfaces using the MOVPE method and report on the improved performance of the UV-B LD.