[15p-K509-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[15p-K509-5] Numerical Analysis of Random Potential due to Substrate Impurities in MOSFETs

〇Kaoru Kato¹, Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka Univ.)

Keywords:

MOSFET,subthreshold slope,low temperature

When a Gaussian random potential is assumed, an exponential tail appears on the low energy side of the space-averaged density of states of a two-dimensional electron gas (2DEG). In this study, we numerically analyze the potential V_2D(x,y) created by substrate impurities, which is considered to be one of the causes of the random potential in MOSFETs, and the effect of this potential on the 2DEG state.