[15p-K509-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[15p-K509-7] TCAD Simulation Analysis of Stacked Nanosheet Transistors

〇Yicheng Liu¹, Jin hyong Lim¹, Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka Univ.)

Keywords:

nanosheet,TCAD device simulation,device structure dependence

In this study, we investigate the device structure dependence of the electrical properties of stacked NSFETs using drift-diffusion (DD) TCAD simulators (HyENEXSS and Advance/TCAD) calibrated with the simulation results of single layer NSFETs by the nonequilibrium Green's function (NEGF) method.