[15p-P05-1~62] 17 Nanocarbon and Two-Dimensional Materials (Poster)

[15p-P05-19] Study on Charge trapping Mechanism of fluorographene
-Fluorination of CVD graphene using plasma process and its structure properties-

〇Toshichika Oigawa¹, Yoshiharu Kirihara¹, Kohei Mashimo¹, Hiroshi Nohira¹, Ryousuke Ishikawa¹, Yuichiro Mitani¹ (1.Tokyo City Univ)

Keywords:

graphene,fluorination

When graphene, a 2D material, is fluorinated, it changes from a conductive film to an insulating film. Nonvolatile memory using fluorographene as a charge trapping layer has been proposed and demonstrated using this technology. However, the details of how fluorine binds to graphene and how the charge is trapped that have not been clarified. Based on our previous investigations, we hypothesized that fluorine binds to either the unbound carbon at the grain boundary, the unbound carbon at defects, or the carbon-bonded hands forming the π-bond network of graphene and functions as a charge-storing layer. In this study, we investigated the charge-capture mechanism of fluorographene by fluorination with plasma using graphene with different grain sizes, and examined the fluorine-binding sites and structure by physical analysis.