[15p-P05-1~62] 17 Nanocarbon and Two-Dimensional Materials (Poster)

[15p-P05-21] High-resolution micro-ARPES study of artificial heterostructure devices

〇Koki Yamamoto¹, Koki Yanagizawa¹, Katsuaki Sugawara^1,2,3, Hiroto Ogura^2,4, Toshiaki Kato^2,4, Kenzi Watanabe^5,6, Takashi Taniguchi^5,6, Kenichi Ozawa⁷, Takashi Takahashi¹, Takafumi Sato^1,2,8,9,10 (1.Grad. Sch. of Sci., Tohoku Univ., 2.WPI-AIMR., Tohoku Univ., 3.JST-PRESTO, 4.Grad. Sch. of Eng., 5.NIMS, 6.NIMS-MANA, 7.KEK-IMSS-PF, 8.CSIS, Tohoku Univ., 9.SRIS, Tohoku Univ., 10.MathCSS, Tohoku Univ.)

Keywords:

Graphene,Field Effect Transistor,ARPES

In this study, we fabricated field-effect transistor (FET) device based on an artificial hetero-structure and revealed it’s electronic structure of the FET device by high-resolution micro-ARPES. The FET device was fabricated by directly transferring an artificial hetero-structure with a size of about 20 μm onto a SiO₂/Si semiconducting substrate. By space-resolved ARPES measurements, we find the local position of the artificial hetero-structure on the FET device, and success in observing the band structure of the artificial hetero-structure by high-resolution ARPES.