[15p-P05-1~62] 17 Nanocarbon and Two-Dimensional Materials (Poster)

[15p-P05-28] Photovoltaic characteristics of rotationally faulted multilayer Graphene/n-Si Schottky junction device

〇Hojun Im¹, Masahiro Teraoka¹ (1.Hirosaki Univ.)

Keywords:

Rotationally faulted multi-layer graphene,Photovoltaic device

Rotationally faulted Multi-Layer Graphene (rf-MLG) has attracted significant attention due to its high robustness and physical properties comparable to single layer graphene (SLG). In this study, we fabricated rf-MLG/n-Si Schottky junction device using a PMMA-free transfer method and investigated its potential as photovoltaic device. As a result, the device exhibited photovoltaic characteristics comparable to those using SLG, demonstrating strong potential for application as photovoltaic devices.