[15p-P05-1~62] 17 Nanocarbon and Two-Dimensional Materials (Poster)

[15p-P05-33] Atomic layer deposition growth of molybdenum disulfide thin films using tetra-coordinated solid molybdenum precursor

〇Kota Nakayama¹, Hong En Lim¹, Keiji Ueno¹ (1.Saitama Univ.)

Keywords:

transition metal dichalcogenide,atomic layer deposition,molybdenum disulfide

Molybdenum disulfide (MoS₂) has attracted attention for its excellent electrical properties and has been actively investigated for device applications, and atomic layer deposition (ALD) is a technique for growing MoS₂ thin films. In this study, an attempt was made to grow MoS₂ thin films at 200 ºC by the ALD method using a highly reactive four-coordinate solid molybdenum precursor. In addition, the crystallinity of the MoS₂ thin film was improved by adjusting the number of times the sulfur (S) precursor was supplied during a cycle and the number of ALD cycles.