[15p-P05-1~62] 17 Nanocarbon and Two-Dimensional Materials (Poster)

[15p-P05-34] Direct growth of MoS₂ thin films at the Au/SiO₂ interface

〇Shota Saruta¹, Keiji Ueno¹, Hon En Lim¹ (1.Saitama Univ.)

Keywords:

Transition metal dichalcogenide,Chemical vapor deposition,Molybdenum disulfide

Molybdenum disulfide (MoS₂) has a smooth surface without dangling bonds and functions as a direct-transition semiconductor with a bandgap of approximately 1.8 eV in its monolayer form, making it a subject of active research for device applications. However, many conventional device fabrication methods involve depositing a thin film first and then forming electrodes, raising concerns about performance degradation due to contamination from photoresists and damage during electrode formation. In this study, we aim to directly grow MoS₂ thin films on the Au/SiO₂ interface to achieve a clean interface and high-quality thin films.