[15p-P05-1~62] 17 Nanocarbon and Two-Dimensional Materials (Poster)

[15p-P05-35] Area-selective growth of tungsten disulfide thin films in the gap between copper electrodes

〇Ryusei Tobita¹, Hong En Lim¹, Keiji Ueno¹ (1.Saitama Univ.)

Keywords:

Area-selective growth,Atomic layer deposition,Transition metal dichalcogenide

Tungsten disulfide (WS₂), a layered material classified as one of the transition metal dichalcogenides (TMDC), has been reported to exhibit enhanced growth during atomic layer deposition (ALD) when minute metal films are deposited on the substrate surface. In this study, we investigated the area-selective ALD growth of WS₂ thin films within a narrow gap formed between closely deposited Cu thin films on a substrate and evaluated their electrical properties.