[15p-P05-1~62] 17 Nanocarbon and Two-Dimensional Materials (Poster)

[15p-P05-37] CVD growth of h-BN using FeNi films deposited on sapphire substrates

〇Takumi Kanai¹, Reo Kamigaki¹, Eri Hashimoto¹, Ryota Okuda², Takeshi Watanabe¹, Shinji Koh¹ (1.Aoyama Gakuin Univ, 2.AGC Inc)

Keywords:

hexagonal boron nitride,CVD,sapphire

Hexagonal boron nitride (h-BN) has insulating properties, high thermal conductivity and chemical stability.It has also been reported that graphene's inherently excellent electrical properties can be achieved by inserting it between graphene and a substrate.In this study, we worked on a technique for depositing FeNi alloys with high solid solubility of B and N on single-crystal sapphire substrates and depositing h-BN at the interface between the FeNi deposited film and the sapphire substrate using chemical vapour deposition (CVD).