Presentation Information
[15p-P05-4]Chirality-Controlled Growth of Single-Walled Carbon Nanotubes Using Nanorings
〇Rikizo Hatakeyama1, Hiroshi Ueno2,3, Eunsang Kwon3, Fuminori Misaizu3 (1.Tohoku Univ. NICHC, 2.Tohoku Univ. FRIIS, 3.Tohoku Univ. GSS)
Keywords:
Single-walled carbon nanotubes,Chirality control,Critical plasma processing
Toward an ultimate challenge of controlling the sidewall structure, chirality (n, m), of single-walled carbon nanotubes (SWNTs), we have made the best use of plasma processing technique (PPCT), which is expected to achieve low-temperature growth of SWNTs. Here, we have utilized carbon nanorings ([n]CPPs, n=6~12) as the seeded-growth molecules, which can be viewed as simple units of (n, n) armchair/metallic SWNTs.
As a result, we have found a critical ambient temperature in the PPCT, where an equilibrium state is sophisticatedly maintained between carbon-source deposition and etching of unwanted materials. Then, we have for the first time realized the single-chirality growth of near (10, 10) and (12, 12) metallic SWNTs at the critical temperature of 350 ℃, which is the lowest temperature in the SWNT-growth experiments so far.
As a result, we have found a critical ambient temperature in the PPCT, where an equilibrium state is sophisticatedly maintained between carbon-source deposition and etching of unwanted materials. Then, we have for the first time realized the single-chirality growth of near (10, 10) and (12, 12) metallic SWNTs at the critical temperature of 350 ℃, which is the lowest temperature in the SWNT-growth experiments so far.
Comment
To browse or post comments, you must log in.Log in