Presentation Information

[15p-P05-49]Strain effect detected by Raman peak shifts in bulk layered semiconductor SnS

〇Kazuki Koyama1, Atsuhiko Mori1, Jun Ishihara1, Sota Yamamoto1, Soungmin Bae1, Yu Kumagai1, Makoto Kohda1,2,3,4 (1.Grad. Sch. of Eng., Tohoku Univ., 2.CSIS, Tohoku Univ., 3.DEFS, Tohoku Univ., 4.QUARC, QST)

Keywords:

2D materials,Raman spectroscopy,strain engineering


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