Presentation Information

[15p-P05-50]Polarized Raman spectroscopy analysis of the excitonic insulator Ta2NiSe5

〇Masako Suzuki1, Sarah Harmer2, Sara Miller2, Yoshiaki Kobayashi3, Yukinori Ohta4 (1.Gunma Univ., 2.Flinders Univ., 3.Nagoya Univ., 4.Chiba Univ.)

Keywords:

Transition metal chalcogenide,Raman Spectroscopy

In transition-metal chalcogenide materials such as Ta2NiSe5, a phase transition to a low-temperature phase caused possibly by the condensation of spin-singlet electron-hole pairs (or excitons) has been reported to occur. A recent report has also suggested that a crossover temperature exist far above the transition temperature, where the preformed pair state appears, leading to an intense discussion on the precursor phenomena of the excitonic phase transition. In this study, we perform polarized Raman analysis of Ta2NiSe5 and observe the local structural changes that occur around the crossover temperature.

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