[15p-P05-1~62] 17 Nanocarbon and Two-Dimensional Materials (Poster)

[15p-P05-56] ReRAM characteristics of WSe₂/WO_x heterostructures

〇(M1)Shuhei Fukushima¹, Che-Yi Lin², Mitsuru Inada¹, Keiji Ueno³, Yen-Fu Lin², Mahito Yamamoto¹ (1.Kansai Univ., 2.NCHU, 3.Saitama Univ.)

Keywords:

Resistive random access memory,two-dimensional material

Resistive random access memory (ReRAM) is a two-terminal nonvolatile memory consisting of a thin film of oxide or other material sandwiched between electrodes, and is expected to be applied to next-generation ultra-low power computing due to its high-speed and low-voltage operation. Recently, it has been reported that low-voltage and stable ReRAM operation is possible by using a heterostructure of PdSe2, a two-dimensional material, and PdSeOx, an oxide film formed on its surface, as the resistive switching layer. In this study, we fabricated a WOx /WSe2 heterostructure by oxygen plasma treatment of two-dimensional WSe2 and investigated its potential application to ReRAM.