[15p-P09-1~2] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[15p-P09-1] Etching rate control of HSQ etch back process for nano-sized electrode fabrication

〇Takeshi Fujii¹, Kaori Fujii¹, Guohai Chen¹, Yamada Takeo¹ (1.AIST)

Keywords:

HSQ,etch back

Two-terminal devices such as carbon nanotubes RAM (CRAM) require nano-sized electrodes which is size of 100 nm or less for operation. The etchback process using HSQ is a simple method for fabricating nano-sized electrodes at the laboratory level. However, the etching rate of HSQ strongly depends on the crystallinity of HSQ, and resulting shape of the electrodes is changed. Therefore, we investigated the relationship between the crystallinity and the etching rate by annealing. It was found that annealing of HSQ induce the change in crystal structure to SiO2, and the etching rate is reduced.